BUV50

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV50 DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @IC= 10A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage (VBE= -1.5V) Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 250 125 7 25 50 6 12 150 175 -65~175 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUV50 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0; L= 25mH 125 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 IC= 10A; IB= 0.5A IC= 10A; IB= 0.5A;TC= 100℃ IC= 20A ;IB= 2A IC= 20A; IB= 2A;TC= 100℃ IC= 20A ;IB= 2A IC= 20A; IB= 2A;TC= 100℃ VCE= VCEV; RBE= 10Ω VCE= VCEV; RBE= 10Ω; TC=100℃ VCE= VCEV; VBE= -1.5V VCE= VCEV; VBE= -1.5V;TC=100℃ VEB= 5V; IC= 0 7 0.8 0.9 0.9 1.5 1.6 1.7 1.0 5.0 1.0 5.0 1.0 V VCE(sat)-1 Collector-Emitter Saturation Voltage V VCE (sat)-2 Collector-Emitter Saturation Voltage V VBE(sat) Base-Emitter Saturation Voltage V ICER Collector Cutoff Current mA ICEV Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 10A ; VCE= 4V 20 Switching times Resistive Load tr Rise Time IC= 24A; IB1= 3A; VCC= 100V VBB= -5V, RB= 0.83Ω; tp= 30μs 0.6 μs ts Storage Time 1.2 μs tf Fall Time 0.3 μs isc Website：www.iscsemi.cn