BUV82

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV82/83 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)-BUV82 = 450V(Min)-BUV83 ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUV82 BUV83 BUV82 VCEO Collector-Emitter Voltage BUV83 VEBO IC ICM IB B VALUE 850 UNIT VCES Collector- Emitter Voltage VBE=0 V 1000 400 V 450 10 6 10 2 3 100 150 -65~150 V A A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.25 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUV82/83 TYP. MAX UNIT BUV82 VCEO(SUS) Collector-Emitter Sustaining Voltage BUV83 IC= 0.1A ;IB= 0; L=25 mH B 400 V 450 VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICES Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A B 3.0 V Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.4 V Base-Emitter Saturation Voltage IC= 4A; IB= 1.25A B 1.6 1 2 10 v Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ VEB= 10V; IC=0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 0.6A; VCE= 5V 22 fT Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V;ftest= 1MHz 6 MHz Switching Times; Resistive Load μs μs μs ton ts tf Turn-On Time IC= 2.5A; IB1= 0.5A;IB2= -1.0A; VCC= 250V 0.3 0.6 Storage Time 2.0 3.5 Fall Time 0.3 0.75 isc Website：www.iscsemi.cn 2