BUV89

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV89 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in AC motor control systems from threephase mains. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage VBE=0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 1200 800 5 8 15 4 6 125 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV89 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L=25 mH B 800 V VCE(sat)-1 VCE(sat)-2 VBE(sat) ICES Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.0 V Collector-Emitter Saturation Voltage IC= 6A; IB= 3A B 1.0 V Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ VEB= 5V; IC=0 1.3 1 2 10 V Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 1A; VCE= 5V 8 COB Output Capacitance IE= 0; VCB= 10V;ftest= 1MHz IC= 0.1A ; VCE= 5V;ftest= 5MHz 125 pF fT Current-Gain—Bandwidth Product 7 MHz Switching Times; Resistive Load μs μs μs ton ts tf Turn-On Time 0.2 Storage Time IC= 4.5A; IB1= -IB2= 2A 3.5 Fall Time 0.5 isc Website：www.iscsemi.cn 2