BUW11A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ;high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION BUW11 BUW11A Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER BUW11 Collector-base voltage BUW11A BUW11 VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-emitter voltage BUW11A Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 450 9 5 10 2 4 100 150 -65~150 V A A A A W ℃ ℃ Open emitter 1000 400 V CONDITIONS VALUE 850 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base MAX 1.25 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BUW11 VCEO(SUS) Collector-emitter sustaining voltage BUW11A BUW11 VCEsat Collector-emitter saturation voltage BUW11A BUW11 VBEsat Base-emitter saturation voltage BUW11A ICES IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=2.5A; IB=0.5A VCE=Rated VCES; VBE=0 Tj=125℃ VEB=9V; IC=0 IC=5mA ; VCE=5V IC=0.5A ; VCE=5V IC=2.5A; IB=0.5A IC=3A; IB=0.6A IC=3A; IB=0.6A IC=0.1A ; IB=0; L=25mH CONDITIONS BUW11 BUW11A MIN 400 TYP. MAX UNIT V 450 1.5 V 1.4 V 1.0 2.0 10 10 10 35 35 mA mA Switching times resistive load ton ts tf Turn-on time For BUW11F IC=3A ;IB1=-IB2=-0.6A Storage time For BUW11AF IC=2.5A ;IB1=-IB2=-0.5A Fall time 0.8 4.0 μs μs 1.0 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW11 BUW11A Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3