BUW12A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage,fast speed ・Low collector saturation voltage APPLICATIONS ・Specially intended for operating In industrial applications PINNING (See Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUW12 BUW12A Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER BUW12 Collector-base voltage BUW12A BUW12 VCEO VEBO IC ICM IB PT Tj Tstg Collector-emitter voltage BUW12A Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 450 9 8 20 4 125 150 -65~175 V A A A W ℃ ℃ Open emitter 1000 400 V CONDITIONS VALUE 850 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.2 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BUW12 IC=0.1A ; IB=0; L=25mH BUW12A VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage BUW12 BUW12A IEBO hFE Emitter cut-off current DC current gain IC=6A; IB=1.2A IC=6A; IB=1.2A VCE=850V; VBE=0 CONDITIONS BUW12 BUW12A MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 1.5 1.5 V V ICES Collector cut-off current 1.0 VCE=1000V; VBE=0 VEB=9V; IC=0 IC=1A ; VCE=5V 15 10 50 mA mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=6A ;IB1=-IB2=1.2A VCC=240V 1.0 4.0 0.8 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW12 BUW12A Fig.2 Outline dimensions 3