BUW13A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION BUW13 BUW13A Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER BUW13 VCBO Collector-base voltage BUW13A BUW13 VCEO Collector-emitter voltage BUW13A VEBO IC ICM IB IBM PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 450 9 15 30 6 9 175 150 -65~175 V A A A A W ℃ ℃ Open emitter 1000 400 V CONDITIONS VALUE 850 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BUW13 VCEO(SUS) Collector-emitter sustaining voltage BUW13A BUW13 VCEsat Collector-emitter saturation voltage BUW13A BUW13 VBEsat Base-emitter saturation voltage BUW13A ICES IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=10A; IB=2A IC=0.1A ; IB=0; L=25mH CONDITIONS BUW13 BUW13A MIN 400 TYP. MAX UNIT V 450 1.5 IC=8A; IB=1.6A IC=10A; IB=2A 1.6 IC=8A; IB=1.6A VCE=Rated VCES; VBE=0 TC=125℃ VEB=9V; IC=0 IC=20mA ; VCE=5V IC=1.5A ; VCE=5V 10 10 1.0 4.0 10 35 35 V V mA mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time For BUW13A IC=8A ;IB1=-IB2=1.6A 1.0 4.0 0.8 μs μs μs For BUW13 IC=10A ;IB1=-IB2=2A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW13 BUW13A Fig.2 Outline dimensions(unindicated tolerance:±0.10mm) 3