BUW13W

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-247 package ・High voltage,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector DESCRIPTION BUW13W BUW13AW Fig.1 simplified outline (TO-247) and symbol Emitter Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER BUW13W Collector-base voltage BUW13AW BUW13W VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-emitter voltage BUW13AW Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 450 9 15 30 6 9 175 150 -65~150 V A A A A W ℃ ℃ Open emitter 1000 400 V CONDITIONS VALUE 850 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base MAX 0.7 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BUW13W VCEO(SUS) Collector-emitter sustaining voltage BUW13AW BUW13W VCEsat Collector-emitter saturation voltage BUW13AW BUW13W VBEsat Base-emitter saturation voltage BUW13AW ICES IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=8A; IB=1.6A VCE=Rated VCES; VBE=0 Tj=125℃ VEB=9V; IC=0 IC=20mA ; VCE=5V IC=1.5A ; VCE=5V IC=8A; IB=1.6A IC=10A; IB=2A IC=10A; IB=2A IC=0.1A ; IB=0; L=25mH CONDITIONS BUW13W BUW13AW MIN 400 TYP. MAX UNIT V 450 1.5 V 1.6 V 1.0 4.0 10 10 10 35 35 mA mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time For BUW13AW IC=8A ;IB1=-IB2=-1.6A 1.0 4.0 0.8 μs μs μs For BUW13W IC=10A ;IB1=-IB2=-2A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW13W BUW13AW Fig.2 Outline dimensions 3