BUW24

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW24 DESCRIPTION ・With TO-3 package ・High dielectric strength ・Short switching time APPLICATIONS ・Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION MAXIMUN RATINGS SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tmb≤25℃ Open emitter Open base Open collector CONDITIONS VALUE 450 350 7 10 3 100 150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=450V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 10 15 MIN 350 TYP. BUW24 MAX UNIT V 0.8 1.5 0.1 0.1 80 V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=5A IB1=- IB2=0.5A RL=10Ω 2.0 4.0 1.2 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW24 Fig.2 Outline dimensions 3