BUW35

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW35 DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For high voltage ,fast switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC≤25℃ CONDITIONS Open emitter Open base Open collector VALUE 800 400 7 10 15 5 125 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.4 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUW35 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 400 V VCEsat VBEsat Collector-emitter saturation voltage IC=8A; IB=2.5A IC=8A; IB=2.5A VCE=800V ;VBE=0 TC=125℃ VEB=7V; IC=0 1.5 V Base-emitter saturation voltage 1.8 0.1 3.0 1 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=5V 15 50 hFE-2 DC current gain IC=5A ; VCE=5V 8 Switching times μs μs μs ton Turn-on time IC=5A ;IB1=- IB2=1A VCC=250V 0.7 ts Storage time 3.0 tf Fall time 0.8 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW35 Fig.2 Outline dimensions 3