BUW40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW40/A/B DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B ·High Switching Speed ·High Power Dissipation APPLICATIONS ·Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUW40 VCEV Collector-Emitter Voltage VBE= -1.5V BUW40A BUW40B BUW40 VCEO(SUS) Collector-Emitter Voltage BUW40A BUW40B VEBO IC ICM PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 450 550 650 300 350 400 6 1 2 40 150 -65~150 V A A W ℃ ℃ V V UNIT isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUW40 VCEO(SUS) Collector-Emitter Sustaining Voltage BUW40A BUW40B V(BR)EBO VCE(sat) VBE(on) Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage BUW40 ICEV Collector Cutoff Current BUW40A BUW40B IEBO hFE fT Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product IE= 1mA ; IC= 0 IC= 1A; IB= 0.2A IC= 1A; IB= 0.2A,TC= 150℃ B B BUW40/A/B CONDITIONS MIN 300 TYP. MAX UNIT IC= 200mA ; IB= 0 350 400 6 1.0 2.0 1.5 0.1 1.0 0.1 1.0 0.1 1.0 1.0 10 10 50 V V V V IC= 1A ; VCE= 3V VCE= 450V;VBE= -1.5V VCE= 450V;VBE= -1.5V,TC= 150℃ VCE= 550V;VBE= -1.5V VCE= 550V;VBE= -1.5V,TC= 150℃ VCE= 650V;VBE= -1.5V VCE= 650V;VBE= -1.5V,TC= 150℃ VEB= 6V; IC=0 IC= 1A ; VCE= 3V IC= 0.5A ;VCE= 10V mA mA MHz isc Website：www.iscsemi.cn 2