BUW41

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW41/A/B DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min)- BUW41 = 350V(Min)- BUW41A = 400V(Min)- BUW41B ·High Switching Speed ·High Power Dissipation APPLICATIONS ·Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUW41 VCEV Collector-Emitter Voltage VBE= -1.5V BUW41A BUW41B BUW41 VCEO(SUS) Collector-Emitter Voltage BUW41A BUW41B VEBO IC ICM PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 450 550 650 300 350 400 6 5 8 100 150 -65~150 V A A W ℃ ℃ V V UNIT isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUW41 VCEO(SUS) Collector-Emitter Sustaining Voltage BUW41A BUW41B V(BR)EBO VCE(sat) VBE(sat) Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage BUW41 ICEV Collector Cutoff Current BUW41A BUW41B IEBO hFE fT Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product IE= 1mA ; IC= 0 IC= 5A; IB= 1A IC= 5A; IB= 1A,TC= 150℃ B B BUW41/A/B CONDITIONS MIN 300 TYP. MAX UNIT IC= 200mA ; IB= 0 350 400 6 1.0 2.0 1.6 0.1 1.0 0.1 1.0 0.1 1.0 1.0 10 15 V V V V IC= 5A; IB= 1A B VCE= 450V;VBE= -1.5V VCE= 450V;VBE= -1.5V,TC= 150℃ VCE= 550V;VBE= -1.5V VCE= 550V;VBE= -1.5V,TC= 150℃ VCE= 650V;VBE= -1.5V VCE= 650V;VBE= -1.5V,TC= 150℃ VEB= 6V; IC=0 IC= 5A ; VCE= 3V IC= 0.5A ;VCE= 10V mA mA MHz isc Website：www.iscsemi.cn 2