BUW41B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUW41B DESCRIPTION ·High Voltage ·High Switching Speed ·Low Collector Saturation Voltage APPLICATIONS ·Off-line power supplies ·High voltage inverters ·Switching regulators ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCEV VCEX VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE=100Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 650 450 450 400 8 8 10 4 100 150 -65~150 UNIT V V V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.25 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV IEBO hFE COB fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 0.2A; IB= 0 IC= 5A; IB= 1A B BUW41B MIN 400 TYP. MAX UNIT V 1.0 2.0 1.6 0.1 2.0 10 50 15 40 300 60 V V V mA mA IC= 8A; IB= 4A B IC= 5A; IB= 1A B VCE= 650V; VBE= -1.5V VEB= 8V; IC= 0 IC= 5A; VCE= 3V IE= 0; VCB= 10V;ftest= 0.1MHz IC= 0.2A; VCE= 10V pF MHz Switching Times; Resistive Load td tr ts tf Delay Time Rise Time IC= 5A; IB1= -IB2= 1A; VCC= 125V;tp= 20μs Storage Time Fall Time 2.5 0.4 0.1 0.5 μs μs μs μs isc Website：www.iscsemi.cn