BUW49

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW49 DESCRIPTION ・With TO-3PN package. ・High current capability. ・Fast switching speed. ・Low collector saturation voltage APPLICATIONS ・Switching regulators. ・Motor control. ・High frequency and efficency converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Base current (peak) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 160 80 7 30 40 6 10 150 175 -65~175 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW49 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEX IEBO fT PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current Transition frequency CONDITIONS IE=50mA; IC=0 IC=0.2A; IB=0;L=25mH IC=40A; IB=4A IC=30A; IB=3A IC=30A; IB=3A VCE=rated ;VBE=-1.5V TC=125℃ VEB=5V; IC=0 VCE=15V,f=15MHz;IC=1A 8 MIN 7 80 1.4 1.2 2.0 1 3 1 TYP. MAX UNIT V V V V V mA mA Switching times : ton ts tf Turn-on time Storage time Fall time IC=30A; IB1=- IB2=4A VCC=80V 0.8 0.6 0.15 1.2 1.1 0.25 μs μs μs THERMAL CHARACTERISTICS SYMBOL Rth j-case Thermal resistance junction case PARAMETER MAX 1 UNIT ℃/W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW49 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3