BUW50

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW50 DESCRIPTION ·With TO-3PN package ·High speed switching ·Low saturation voltage APPLICATIONS ·Designed for use in general purpose power amplifier application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Totalpower dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 250 125 7 25 50 150 175 -65~175 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEV IEBO PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current CONDITIONS IC=0.2A ;L=25mH IE=20mA ;IC=0 IC=10A; IB=0.5A IC=20A; IB=2A IC=20A; IB=2A VCE=250V;VBE=-1.5V VEB=5V; IC=0 MIN 125 7 TYP. BUW50 MAX UNIT V V 0.9 1.0 1.6 0.1 1.0 V V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time VCC=60V;IC=10A; IB1 =1.0A;Pw=20μs 1.9 1.5 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW50 Fig.2 outline dimensions 3