BUW64C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 90V(Min)- BUW64A = 110V(Min)- BUW64B = 130V(Min)- BUW64C ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUW64A VCEV Collector-Emitter Voltage VBE= -1.5V BUW64B BUW64C BUW64A VCEO(SUS) Collector-Emitter Voltage BUW64B BUW64C VEBO IC ICM IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 140 160 180 90 110 130 7 7 10 5 50 150 -65~150 V A A A W ℃ ℃ V V UNIT BUW64A/B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUW64A VCEO(SUS) Collector-Emitter Sustaining Voltage BUW64B BUW64C BUW64A/B BUW64C IC= 5A; IB= 0.5A B BUW64A/B CONDITIONS MIN 90 TYP. MAX UNIT IC= 10mA ; IB= 0 110 130 0.8 V VCE(sat)-1 Collector-Emitter Saturation Voltage V IC= 4A; IB= 0.4A B 0.7 0.8 1.4 V 1.4 0.1 1.0 0.1 1.0 0.1 1.0 0.1 30 20 20 50 50 150 pF MHz mA mA V VCE(sat)-2 Collector-Emitter Saturation Voltage BUW64A/B BUW64C BUW64A IC= 7A; IB= 0.7A B VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B IC= 4A; IB= 0.4A B VCE= 140V;VBE= -1.5V VCE=140V;VBE= -1.5V,TC= 150℃ VCE= 160V;VBE= -1.5V VCE= 160V;VBE= -1.5V,TC= 150℃ VCE= 180V;VBE= -1.5V VCE= 180V;VBE= -1.5V,TC= 150℃ VEB= 7V; IC=0 IC= 0.2A ; VCE= 2V ICEV Collector Cutoff Current BUW64B BUW64C IEBO hFE-1 Emitter Cutoff Current DC Current Gain BUW64/A IC= 5A ; VCE= 2V IC= 4A ; VCE= 2V IE= 0 ;VCB= 10V; f= 0.1MHz IC= 0.5A ;VCE= 10V hFE-2 DC Current Gain BUW64B COB fT Output Capacitance Current-Gain—Bandwidth Product Switching Times td tr tstg tf Delay Time Rise Time Storage Time Fall Time For BUW64C IC= 4A; IB1= -IB2= 0.4A 0.1 0.25 1.0 0.5 μs μs μs μs VCC= 70V; tp= 20μs For BUW64A/B IC= 5A; IB1= -IB2= 0.5A isc Website：www.iscsemi.cn 2