BUW87

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 150V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators and switching control amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCES VCEO VEBO IC ICM IB B BUW87 PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE=0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Emitter Current-Continuous Emitter Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 300 300 150 6 10 15 2 3 11 15 62.5 200 -65~200 UNIT V V V V A A A A A A W ℃ ℃ IBM IE IEM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.8 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUW87 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L=25 mH B 150 V VCE(sat)-1 VCE(sat)-2 VBE(sat) ICES Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A B 1.0 V Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 0.65 V Base-Emitter Saturation Voltage IC= 7A; IB= 0.7A B 1.6 1 2 20 V Collector Cutoff Current VCE= VCBO;VBE= 0 VCE= VCBO;VBE= 0; TJ= 150℃ IC= 4A; VCE= 5V mA hFE DC Current Gain fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 5V;ftest= 5MHz 50 MHz Switching Times; Resistive Load μs μs μs ton ts tf Turn-On Time 0.25 0.4 Storage Time IC= 7A; IB1= -IB2= 0.7A;VCC=75V 0.7 1.3 Fall Time 0.15 0.3 isc Website：www.iscsemi.cn 2