BUX10

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX10 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability APPLICATIONS ·Motor control ·Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEX VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 160 160 125 7 25 30 5 150 200 -65~200 UNIT V V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEO ICEX IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 0.2A; IB= 0 IE= 50mA; IC= 0 IC= 10A; IB= 1A IC= 20A ;IB= 2A IC= 20A ;IB= 2A VCE= 100V; IB= 0 VCE= 160V;VBE= -1.5V VCE= 160V;VBE= -1.5V;TC=125℃ VEB= 5V; IC= 0 IC= 10A ; VCE= 2V IC= 20A ; VCE= 4V IC= 1A; VCE= 15V, ftest= 10MHz 20 10 8 MIN 125 7 TYP. BUX10 MAX UNIT V V 0.6 1.2 2.0 1.5 1.5 6.0 1.0 60 V V V mA mA mA MHz Switching Times ton ts tf Turn-on Time Storage Time IC= 20A ;IB1= -IB2= 2A; VCC= 30V Fall Time 0.3 μs IC= 20A ;IB1= 2A; VCC= 30V 1.5 1.2 μs μs isc Website：www.iscsemi.cn