BUX12

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX12 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability APPLICATIONS ·Power switching circuits ·Motor control Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEX VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 300 300 250 7 20 25 4 150 200 -65~200 UNIT V V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEO ICEX IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 0.1A; IB= 0 IC= 5A; IB= 0.5A B BUX12 MIN 250 TYP. MAX UNIT V 1.0 1.5 1.5 1.5 1.5 6.0 1.0 20 10 8 60 V V V mA mA mA IC= 10A ;IB= 1.25A IC= 10A ;IB= 1.25A VCE= 200V; IB= 0 VCE= 300V;VBE= -1.5V VCE= 300V;VBE= -1.5V;TC=125℃ VEB= 5V; IC= 0 IC= 5A ; VCE= 4V IC= 10A ; VCE= 4V IC= 1A; VCE= 15V, ftest= 10MHz MHz Switching Times ton ts tf Turn-on Time Storage Time IC= 10A ;IB1= -IB2= 1.25A; VCC= 150V Fall Time 0.5 IC= 10A ;IB1= 1.25A; VCC= 150V 1.0 2.0 μs μs μs isc Website：www.iscsemi.cn