BUX21

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX21 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability APPLICATIONS ·Desinged for use in switching and linear applications in military and industrial equipment. Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEX VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 250 250 200 7 40 50 8 350 200 -65~200 UNIT V V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEO ICEX IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 0.2A; IB= 0 IE= 50mA; IC= 0 IC= 12A; IB= 1.2A IC= 25A ;IB= 3A IC= 25A ;IB= 3A VCE= 160V; IB= 0 VCE= 250V;VBE= -1.5V VCE= 250V;VBE= -1.5V;TC=125℃ VEB= 5V; IC= 0 IC= 12A ; VCE= 2V IC= 25A ; VCE= 4V IC= 2A; VCE= 15V, ftest= 10MHz 20 10 8 MIN 200 7 TYP. BUX21 MAX UNIT V V 0.6 1.5 1.5 3.0 3.0 12.0 1.0 60 V V V mA mA mA MHz Switching Times ton ts tf Turn-on Time Storage Time IC= 25A ;IB1= -IB2= 3A;VCC= 100V Fall Time 0.4 μs IC= 25A ;IB1= 3A; VCC= 100V 1.2 1.8 μs μs isc Website：www.iscsemi.cn