BUX32

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUX32 = 450V (Min)-BUX32A = 450V (Min)-BUX32B ·Low Saturation Voltage APPLICATIONS ·Designed for off-line power supplies and are also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUX32 VCES Collector- Emitter Voltage(VBE= 0) BUX32A BUX32B BUX32 VCEO Collector-Emitter Voltage BUX32A BUX32B VEBO IC ICM IB B BUX32/A/B MAX 800 900 1000 400 450 500 8 8 10 5 150 200 -65~200 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUX32 VCEO(SUS) Collector-Emitter Sustaining Voltage BUX32A BUX32B VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage BUX32 ICEV Collector Cutoff Current BUX32A BUX32B IEBO hFE fT Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product IC= 6A; IB= 1.2A B BUX32/A/B CONDITIONS MIN 400 TYP. MAX UNIT IC= 0.2A ; IB= 0 450 500 1.0 1.3 0.1 1.0 0.1 1.0 0.1 1.0 2 8 15 V V V IC= 6A; IB= 1.2A B VCE= 800V;VBE= -1.5V VCE= 800V;VBE= -1.5V,TC=125℃ VCE= 900V;VBE= -1.5V VCE= 900V;VBE= -1.5V,TC=125℃ VCE= 1000V;VBE= -1.5V VCE= 1000V;VBE= -1.5V,TC=125℃ VEB= 8V; IC= 0 IC= 6A ; VCE= 3V IC= 0.2A ;VCE= 10V mA mA MHz isc Website：www.iscsemi.cn