BUX37

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BUX37 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) APPLICATIONS ·Power switching ·Solenoid drivers ·Automotive ignition ·Series and shunt regulators ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 400 400 7 15 4 35 150 -65~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUX37 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A; IB= 0; L= 1.5mH B 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA B 1.5 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 150mA 2.0 V V BE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 150mA 2.7 V ICEO Collector Cutoff Current VCE= 400V; IB= 0 0.25 mA hFE DC Current Gain IC= 15A; VCE= 5V 20 isc Website：www.iscsemi.cn