BUX40

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUX40 DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in switching and linear applications PINNING(see fig.2) PIN 1 2 3 DESCRIPTION Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ tp=10ms Open emitter Open base Open collector CONDITIONS VALUE 160 125 7 20 28 4 120 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.46 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEX ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2mA; IB=0 IE=50mA; IC=0 IC=10 A;IB=1 A IC=15 A;IB=1.88 A IC=15 A;IB=1.88 A VCE=160V;VBE=-1.5V TC=125℃ VCE=100V;IB=0 VEB=5V; IC=0 IC=10A ; VCE=4V IC=15A ; VCE=4V IC=1A ; VCE=15V; f=10MHz 15 8 8.0 MIN 125 7 TYP. BUX40 MAX UNIT V V 1.2 1.6 2.0 1.0 5.0 1.0 1.0 45 V V V mA mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=15A ;IB1=1.88A VCC=30V IC=15A ;IB1=-IB2=1.88A VCC=30V 1.2 1.0 0.4 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUX40 Fig.2 Outline dimensions 3