BUX42

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX42 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 1.2V (Max.)@IC= 4A ·Fast Switching Speed APPLICATIONS ·Designed for use in switching and linear applications in military and industrial equipment. Absolute maximum ratings(Ta=25℃) SYMBOL VCEO VCEX VCBO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 250 300 300 7 12 15 2.4 120 200 -65~200 UNIT V V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.46 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEO ICEX IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 0.2A ; IB= 0 IE= 50mA; IC= 0 IC= 4A; IB= 0.4A B BUX42 MIN 250 7 TYP. MAX UNIT V V 1.2 1.6 2.0 1.0 1.0 5.0 1 15 8 8 45 V V V mA mA mA IC= 6A ;IB= 0.75A IC= 6A ;IB= 0.75A VCE= 200V; IB= 0 VCE= 300V;VBE= -1.5V VCE= 300V;VBE= -1.5V;TC=125℃ VEB= 5V; IC= 0 IC= 4A ; VCE= 4V IC= 6A ; VCE= 4V IC= 1A;VCE= 15V, ftest= 10MHz MHz Switching Times ton ts tf Turn-on Time Storage Time IC= 6A ;IB1=-IB2= 0.75A; VCC= 150V Fall Time 0.2 1.2 IC= 6A ;IB1= 0.75A; VCC= 150V 0.23 1.5 1.0 2.0 μs μs μs isc Website：www.iscsemi.cn