BUX46

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX46/A DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUX46 450V (Min)-BUX46A APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUX46 BUX46A BUX46 BUX46A VEBO IC ICM IB B MAX 850 UNIT VCES Collector- Emitter Voltage(VBE= 0) V 1000 400 V 450 5 3.5 5 1.5 3 85 175 -65~175 V A A A A W ℃ ℃ VCEO Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.75 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUX46 VCEO(SUS) Collector-Emitter Sustaining Voltage BUX46A V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) ICER ICEX IEBO hFE Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain IE= 0.5A ; IC= 0 IC= 3.5A; IB= 0.7A IC= 2.5A; IB= 0.5A IC= 2.5A; IB= 0.5A VCE=VCESmax;RBE≤10Ω VCE=VCESmax;RBE≤10Ω;TJ=124℃ VCE=VCESmax;VBE=-2.5V VCE=VCESmax;VBE=-2.5V;TJ=124℃ VEB= 5V; IC= 0 IC= 1A ; VCE= 5V 15 IC= 0.2A ; IB= 0; L= 25mH 450 CONDITIONS MIN 400 BUX46/A TYP. MAX UNIT V 30 5 1.5 1.3 0.3 2 0.1 1 1 50 V V V V mA mA mA Switching Times , Resistive Load ton tstg tf Turn-On Time Storage Time Fall Time IC= 2.5A ;IB1= -IB2= 0.5A 0.5 1.5 0.5 1.0 3.0 0.8 μs μs μs isc Website：www.iscsemi.cn