BUX47

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUX47 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Intended for high voltage,fast switching applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Bast current Bast current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 850 400 7 9 15 8 10 125 175 -65~175 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.2 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEV IEBO hFE PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.2A; IB=0;L=25mH IE=50mA; IC=0; IC=6A;IB=1.2 A IC=9A;IB=3 A IC=6A;IB=1.2 A VCE=850V;VBE=-2.5V TC=125℃ VEB=5V;IC=0 IC=1A ;VCE=5V 15 MIN 400 7 TYP. BUX47 MAX UNIT V 30 1.5 3 1.6 0.15 1.5 1 50 V V V V mA mA Switching times Ton ts tf Turn-on time Storage time Fall time IC=6A;IB1=-IB2=1.2A; VCC=150V 0.8 2.5 0.8 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUX47 Fig.2 Outline dimensions 3