BUX47A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX47A DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V (Min) ·Fast Switching Speed APPLICATIONS Designed for high voltage, fast switching applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCER VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage (RBE= 10Ω) Collector-Emitter Voltage (VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak tp< 5ms Base Current-Continuous Base Current-peak tp< 5ms Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1000 900 450 7 9 15 8 10 125 175 -65~175 UNIT V V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.2 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUX47A MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 30 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A B 3.0 V VBE(sat) ICER Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.6 0.4 3 0.15 1.5 1.0 V Collector Cutoff Current VCE= 850V; RBE= 10Ω VCE= 850V; RBE= 10Ω; TC=125℃ VCE=850V; VBE= -2.5V VCE=850V; VBE= -2.5V; TC=125℃ VEB= 5V; IC= 0 mA ICEV Collector Cutoff Current mA IEBO Emitter Cutoff Current mA Switching times Resistive Load μs μs μs ton Turn-on Time 0.7 ts Storage Time IC= 5A; IB1=-IB2= 1A; VCC= 150V 3.0 tf Fall Time 0.8 isc Website：www.iscsemi.cn