BUX48

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits Absolute maximum ratings(Ta=25℃) SYMBOL VCEX VCEO VEBO IC ICM IB B BUX48 PARAMETER Collector-Emitter Voltage (VBE= -1.5V) Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 850 400 7 15 30 4 20 175 200 -65~200 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) ICER ICEX IEBO hFE COB PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance CONDITIONS IC= 0.2A ; IB= 0; L= 25mH IE= 50mA; IC= 0 IC= 10A; IB= 2A IC= 10A; IB= 2A;TC= 100℃ IC= 15A ;IB= 3A IC= 10A; IB= 2A IC= 10A; IB= 2A;TC= 100℃ VCE=rated VCER; RBE= 10Ω VCE=rated VCER; RBE= 10Ω;TC=125℃ VCE=rated VCES; VBE(off)= 1.5V VCE=rated VCES; VBE(off)= 1.5V;TC=125℃ VEB= 5V; IC= 0 IC= 10A ; VCE= 5V IE= 0 ; VCB= 10V,ftest= 1MHz 8 MIN 400 7 BUX48 MAX UNIT V V 1.5 2.0 5.0 1.6 1.6 0.5 4 0.2 2 0.1 V V V mA mA mA 350 pF Switching times Resistive Load ton ts tf Turn-on Time Storage Time Fall Time IC= 10A ;IB1=-IB2= 2A; VCC= 300V VBE(off)= 5V,Duty Cycle≤2% 0.9 2.0 0.4 μs μs μs isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX48 isc Website：www.iscsemi.cn