BUX66A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·Contunuous Collector Current-IC= -2A ·Power Dissipation-PD= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= -2.5V(Max)@ IC = -1A APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUX66 VCBO Collector-Base Voltage BUX66A BUX66 VCEO Collector-Emitter Voltage BUX66A VEBO IC ICP IB B BUX66/A VALUE -200 UNIT V -300 -150 V -250 -6 -2.0 -5.0 -1.0 35 200 -65~200 V A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUX66/A TYP. MAX UNIT BUX66 VCEO(SUS) Collector-Emitter Sustaining Voltage BUX66A IC= -200mA ; IB=0 -150 V -250 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.15A B -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.15A B -1.4 V BUX66 ICBO Collector Cutoff Current BUX66A VCB= -150V; IE= 0 -1.0 mA VCB= -250V; IE= 0 -1.0 IEBO Emitter Cutoff Current VEB= -6V; IC=0 -0.5 mA hFE DC Current Gain IC= -1A ; VCE= -5V 10 150 fT Current Gain-Bandwidth Product IC= -0.5A ; VCE= -10V 30 MHz isc Website：www.iscsemi.cn 2