BUX67B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= 2.5V(Max)@ IC = 1A APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUX67 BUX67A VCBO Collector-Base Voltage BUX67B BUX67C BUX67 BUX67A VCEO Collector-Emitter Voltage BUX67B BUX67C VEBO IC ICP IB B BUX67/A/B/C VALUE 200 300 UNIT V 350 400 150 250 V 300 350 6 2.0 5.0 1.0 35 200 -65~200 V A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUX67 BUX67A VCEO(SUS) Collector-Emitter Sustaining Voltage BUX67B BUX67C VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage BUX67 BUX67A ICBO Collector Cutoff Current BUX67B BUX67C IEBO hFE fT Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product VCB= 300V; IE= 0 VCB= 350V; IE= 0 VEB= 6V; IC=0 IC= 1A ; VCE= 5V IC= 0.5A ; VCE= 10V 10 IC= 1A; IB= 0.15A B BUX67/A/B/C CONDITIONS MIN 150 250 TYP. MAX UNIT IC=200mA ; IB=0 300 350 2.5 1.4 1.0 1.0 V V V IC= 1A; IB= 0.15A B VCB= 150V; IE= 0 VCB= 250V; IE= 0 mA 1.0 1.0 0.5 150 25 MHz mA isc Website：www.iscsemi.cn 2