BUX80

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUX80 DESCRIPTION ・With TO-3 package ・High voltage ・Fast switching speed APPLICATIONS ・Switching regulators ・Motor control ・High frequency and efficiency converters PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ・ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 800 400 10 10 15 5 100 150 -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.1 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICES IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A; IB=0 IC=5 A;IB=1 A IC=8 A;IB=2.5 A IC=5 A;IB=1 A IC=8 A;IB=2.5 A VCE=800V;VBE=0 TC=125℃ VEB=10V; IC=0 IC=1.2A ; VCE=5V 30 MIN 400 TYP. BUX80 MAX UNIT V 1.5 3.0 1.4 1.8 1.0 3.0 10 V V V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=5A ;IB1=1A; IB2=-2A VCC=-250V 0.5 3.5 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUX80 Fig.2 Outline dimensions 3