BUX82

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83 ·High Switching Speed APPLICATIONS ·Designed for use as high-speed power switch at high voltage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUX82 VCES Collector-Emitter Voltage BUX83 BUX82 VCEO Collector-Emitter Voltage BUX83 Collector-Emitter Voltage RBE= 50Ω Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature BUX82 BUX83 450 500 V 500 10 6 8 2 3 75 150 -65~150 V A A A A W ℃ ℃ 1000 400 V VALUE 800 V UNIT BUX82/83 VCER VEBO IC ICM IB B IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.65 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUX82 IC= 100mA ; IB= 0; L= 25mH BUX83 BUX82 IC= 100mA ; RBE= 100Ω; L= 15mH BUX83 BUX82 IC= 4A; IB= 1.25A B BUX82/83 CONDITIONS MIN 400 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V 450 500 V 500 3.0 V 1.6 1.5 V(BR)CER Collector-Emitter Breakdown Voltage VCE(sat)-1 Collector-Emitter Saturation Voltage BUX83 BUX82 IC= 2.5A; IB= 0.5A BUX83 IC= 4A; IB= 1.25A B VCE(sat)-2 Collector-Emitter Saturation Voltage V 1.4 1.6 1.4 1.0 2.0 1.0 2.0 10 30 500 6 pF MHz V V VBE(sat)-1 VBE(sat)-2 Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage BUX82 BUX83 IC= 2.5A; IB= 0.5A VCES=800V; VBE(off)= 1.5V VCES=800V; VBE(off)= 1.5V,TC=125℃ VCES=1000V;VBE(off)=1.5V VCES=1000V;VBE(off)=1.5V,TC=125℃ VEB= 10V; IC=0 IC= 1.2A ; VCE= 5V IE= 0;VCB= 10V;ftest= 1MHz IC= 0.2A ; VCE= 10V ;ftest= 1MHz ICES Collector Cutoff Current mA IEBO hFE COB fT Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain--Bandwidth Product mA Switching Times ton tstg tf Turn-On Time Storage Time Fall Time IC= 2.5A; IB1= 0.5A;IB2= -1A; VCC= 250V 0.3 2.0 0.3 0.5 3.5 μs μs μs isc Website：www.iscsemi.cn 2