BUX85

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUX84 BUX85 DESCRIPTION ・With TO-220C package ・High switching speed APPLICATIONS ・Suitable for switching power supplies in TV sets PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolut maximum ratings (Ta=25℃) SYMBOL PARAMETER BUX84 VCBO Collector-base voltage BUX85 BUX84 VCEO Collector-emitter voltage BUX85 VEBO IC ICM IB IBM Ptot Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 450 10 2 3 0.75 1 40 150 -65~150 V A A A A W ℃ ℃ Open emitter 1000 400 V CONDITIONS VALUE 800 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting flange MAX 2.5 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BUX84 V(BR)CEO Collector-emitter breakdown voltage BUX85 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage BUX84 ICES Collector cut-off current BUX85 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency IC=0.3A ;IB=0.03A IC=1A ;IB=0.2A IC=1A ;IB=0.2A VCES=800V; VBE=0 Tj=125℃ VCES=1000V; VBE=0 Tj=125℃ VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.5A ; VCE=5V IC=0.2A ;VCE=10V;f=1.0MHz 20 15 IC=100mA ; IB=0;L=25mH 450 CONDITIONS MIN 400 BUX84 BUX85 TYP. MAX UNIT V 1.5 3.0 1.1 1.0 1.5 V V V mA 0.2 1.5 1.0 100 mA 20 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=1A ;VCC=250V IB1=0.2A;IB2=-0.4A 0.2 2 0.4 0.5 3.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUX84 BUX85 Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3