BUX85F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUX84F BUX85F DESCRIPTION ・With TO-220Fa package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor controls systems PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION ・ Absolut maximum ratings (Ta=25℃) SYMBOL VCBO PARAMETER BUX84F Collector-base voltage BUX85F BUX84F VCEO VEBO IC ICM IB IBM Ptot Tj Tstg Collector-emitter voltage BUX85F Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 450 10 2 3 0.75 1 18 150 -65~150 V A A A A W ℃ ℃ Open emitter 1000 400 V CONDITIONS VALUE 800 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance junction to ambient MAX 55 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BUX84F VCEO(SUS) Collector-emitter sustaining voltage BUX85F VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage BUX84F ICES Collector cut-off current BUX85F IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency IC=0.3A ;IB=0.03A IC=1A ;IB=0.2A IC=1A ;IB=0.2A VCES=800V; VBE=0 Tj=125℃ VCES=1000V; VBE=0 Tj=125℃ VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.5A ; VCE=5V IC=0.2A ;VCE=10V;f=1.0MHz IC=100mA ; IB=0;L=25mH CONDITIONS BUX84F BUX85F MIN 400 TYP. MAX UNIT V 450 0.8 1 1.1 0.2 1.5 mA 0.2 1.5 1.0 20 15 20 MHz 100 mA V V V Switching times ton ts tf Turn-on time Storage time Fall time IC=1A ;VCC=250V IB1=0.2A;IB2=-0.4A 0.2 2 0.4 0.5 3.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUX84F BUX85F Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3