BUX99

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.5A ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in fast switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B BUX99 PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Emitter Current-Continuous Emitter Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 730 300 12 1.5 3 0.75 1.5 2.25 4.5 28 150 -65~150 UNIT V V V A A A A A A W ℃ ℃ IBM IE IEM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 4.5 100 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES ICEX IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 0.1A ; IB= 0; L= 25mH IC= 0.2A; IB= 20mA IC= 0.2A; IB= 20mA VCE= 400V;VBE= 0 VCE= 730V;VBE= -1.5V VCE= 730V;VBE= -1.5V;TJ=100℃ VEB= 12V; IC= 0 IC= 10mA ; VCE= 2V IC= 50mA ; VCE= 5V IC= 0.1A ; VCE= 10V IE= 0; VCB= 10V,ftest= 1MHz 10 16 4 12 MIN 300 TYP. BUX99 MAX UNIT V 2 1 5 50 250 1 V V μA μA mA 42 MHz pF Switching times tstg tf Storage Time IC= 1A ,VCC= 250V, IB1= 20mA; IB2= -40mA Fall Time 0.8 2 μs μs isc Website：www.iscsemi.cn 2