BUY52A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUY52A DESCRIPTION ·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain APPLICATIONS Designed for use in high frequency and efficiency converters such as motor controllers and industrial equipment such as: ·Switching regulators ·Motor control ·High frequency and efficiency converters Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 60 60 7 30 45 8 150 200 -65~200 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) ICBO IEBO hFE fT PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 0.1A; IB= 0 IE= 1mA; IC= 0 IC= 20A; IB= 2A IC= 30A; IB= 3A IC= 30A; IB= 3A VCB= 60V; IE= 0 VEB= 5V; IC= 0 IC= 15A; VCE= 4V IC= 1A ; VCE= 15V 20 10 MIN 60 7 TYP. BUY52A MAX UNIT V V 1.0 1.5 2.0 0.1 0.1 150 V V V mA mA MHz isc Website：www.iscsemi.cn