BUY69B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUY69A BUY69B BUY69C DESCRIPTION ・With TO-3 package ・High voltage capability APPLICATIONS ・For horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER BUY69A VCBO Collector-base voltage BUY69B BUY69C BUY69A VCEO(SUS) Collector-emitter sustaining voltage BUY69B BUY69C VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 1000 800 500 400 325 200 8 10 15 3.0 100 200 -65~200 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.75 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BUY69A VCEO(SUS) Collector-emitter sustaining voltage BUY69B BUY69C BUY69A VCBO Collector-base voltage BUY69B BUY69C VCEsat VBEsat ICES IEBO hFE fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency IC=8A ;IB=2.5A IC=8A ;IB=2.5A IC=1mA; IE=0 IC=100mA ; IB=0 BUY69A BUY69B BUY69C CONDITIONS MIN 400 325 200 1000 800 500 TYP. MAX UNIT V V 3.3 2.2 1.0 1.0 15 10 V V mA mA VCE=rated VCES; VBE=0 VEB=8V; IC=0 IC=2.5A ; VCE=10V IC=0.5A ; VCE=10V;f=1MHz MHz Switching times tr ts tf Rise time Storage time Fall time IC=5A ;IB1=-IB2=1.0A; VCC=250V 0.3 1.8 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUY69A BUY69B BUY69C Fig.2 Outline dimensions 3