BUY89

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUY89 DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) APPLICATIONS ·Designed for use in AC motor control systems from threephase mains. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM ICSM IB B PARAMETER Collector- Emitter Voltage (VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Current-Peak Non-repetitive Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range MAX 1500 800 5 6 10 15 4 6 80 150 -65~150 UNIT V V V A A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.12 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 0.1A ; IB= 0; L= 25mH IC= 4.5A; IB= 2A IC= 4.5A; IB= 2A VCE=VCESMmax;VBE= 0 VCE=VCESMmax;VBE= 0;TJ= 100℃ VEB= 5V; IC= 0 IC= 4.5A ; VCE= 5V IC= 0.1A ; VCE= 5V; ftest= 5MHz IE= 0; VCB= 10V; ftest= 1MHz 2.5 7 125 MIN 800 TYP. BUY89 MAX UNIT V 1.0 1.5 1 10 V V mA mA MHz pF Switching Times , Resistive Load ton tstg tf Turn-On Time Storage Time Fall Time IC= 4.5A ;IB1= -IB2= 2A; VCC= 250V; RL= 56Ω 1.5 4.5 0.5 μs μs μs isc Website：www.iscsemi.cn