BUZ73A

isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUZ73A DESCRIPTION ·Drain Current –ID= 5.8A@ TC=37℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·switching regulators, switching converters ·motor drivers,relay drivers and drivers for high-power Bipolar switching transistors reguiring high speed and gate-driver power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 5.8 A Total Dissipation@TC=25℃ 40 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ ID Ptot Tj Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ73A ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 200 VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.1 RDS(ON) Drain-Source On-stage Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 3.5A 0.6 Ω Gate Source Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 250 uA VSD Diode Forward Voltage IF= 11.6A; VGS= 0 1.7 V isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn