IRF530

isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF530 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 14 A IDM Drain Current-Single Plused 56 A PD Total Dissipation @TC=25℃ 79 W Tj Max. Operating Junction Temperature -55~175 ℃ Storage Temperature -55~175 ℃ MAX UNIT Tstg ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case 1.9 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF530 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 100 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance IGSS V(BR)DSS PARAMETER TYP MAX UNIT V 2 4 V VGS= 10V; ID= 8.3A 0.18 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS=0 250 uA VSD Forward On-Voltage IS= 14A; VGS=0 2.5 V Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, F=1.0MHz 600 pF 250 pF 50 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL Td(on) Tr Td(off) Tf PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time VDD=50V,ID=14A VGS=10V RGS=12Ω RGEN=12Ω Fall Time isc website：www.iscsemi.cn PDF pdfFactory Pro CONDITIONS 2 MIN TYP MAX UNIT 12 15 ns 35 51 ns 25 35 ns 25 36 ns isc & iscsemi is registered trademark www.fineprint.cn