IRF630

MOSFET INCHANGE IRF630 N-channel mosfet transistor Features ・With TO-220 package ・Low on-state and thermal resistance ・Fast switching ・VDSS=200V; RDS(ON)≤0.4Ω;ID=9A ・1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25℃ SYMBOL VDSS VGS ID Ptot Tj Tstg PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25℃ Total Dissipation@TC=25℃ Max. Operating Junction temperature Storage temperature RATING 200 ±20 9 74 150 -65~150 UNIT V V A W ℃ ℃ TO-220 Electrical Characteristics Tc=25℃ SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD Drain-source breakdown voltage Gate threshold voltage Drain-source on-stage resistance Gate source leakage current Zero gate voltage drain current Diode forward voltage VGS=0; ID=0.25mA VDS= VGS; ID=1mA VGS=10V; ID=5.4A VGS=±20V;VDS=0 VDS=200V; VGS=0 IF=9A; VGS=0 200 2 4 400 ±100 V V mΩ nA uA V 10 1.2