IRF630B

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed APPLICATIONS ·Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID PD Tj Tstg ARAMETER Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Power Dissipation@TC=25℃ Max. Operating Junction Temperature Storage Temperature Range VALUE 200 ±30 9 72 150 -55~150 UNIT V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.74 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN IRF630B MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 200 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-stage Resistance VGS= 10V; ID= 4.5A 0.4 Ω IGSS Gate Source Leakage Current VGS= ±30V; VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 10 uA VSD Diode Forward Voltage IF= 9A; VGS= 0 1.5 V isc Website：www.iscsemi.cn