IRF630N

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630N DESCRIPTION ·Drain Current –ID=9.3A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID PD Tj Tstg ARAMETER Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Total Dissipation@TC=25℃ Max. Operating Junction Temperature Storage Temperature Range VALUE 200 ±20 9.3 82 175 -55~175 UNIT V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.83 62 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL V(BR)DSS VGS(th) RDS(ON) IGSS IDSS VSD PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-stage Resistance Gate Source Leakage Current Zero Gate Voltage Drain Current Diode Forward Voltage CONDITIONS VGS=0; ID=0.25mA VDS= VGS; ID= 0.25mA VGS=10V; ID=5.4A VGS=±20V;VDS=0 VDS=200V; VGS=0 IF= 5.4A; VGS=0 MIN 200 2 IRF630N MAX UNIT V 4 0.3 ±100 25 1.3 V Ω nA uA V isc Website：www.iscsemi.cn