IRF640

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID Ptot Tj Tstg ARAMETER Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Total Dissipation@TC=25℃ Max. Operating Junction Temperature Storage Temperature Range VALUE 200 ±20 18 125 150 -55~150 UNIT V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.0 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL V(BR)DSS VGS(th) RDS(on) IGSS IDSS VSD PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-stage Resistance Gate Source Leakage Current Zero Gate Voltage Drain Current Diode Forward Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= VGS; ID= 0.25mA VGS=10V; ID= 10A VGS= ±20V;VDS= 0 VDS= 200V; VGS= 0 IF= 18A; VGS=0 MIN 200 2 IRF640 MAX UNIT V 4 0.18 ±100 200 2.0 V Ω nA uA V isc Website：www.iscsemi.cn