IRF840

INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor IRF840 ·FEATURES ·Drain Current –ID=8.0A@ TC=25℃ ·Drain Source Voltage: VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·DESCRITION ·Designed for high voltage, high speed switching power applications such as switching regulators, converters, solenoid and relay drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 500 ±20 8 32 125 150 -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.0 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN IRF840 MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V Ω RDS(on) IGSS Drain-Source On-Resistance VGS= 10V; ID= 4A VGS= ±20V;VDS= 0 0.85 ±500 Gate-Body Leakage Current nA IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS=0 250 nA VSD Forward On-Voltage IS= 8A; VGS=0 2.0 V · isc Website：www.iscsemi.cn