KSA1614

Inchange Semiconductor Product Specification Silicon PNP Power Transistors KSA1614 DESCRIPTION ·With TO-220F package ·Collector-base voltage: VCBO=-80V ·Collector dissipation: PC=20W(TC=25℃) APPLICATIONS ·Power regulator ·Low frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -55 -5 -3 20 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current DC current gain CONDITIONS IC=-10mA ; IB=0 B KSA1614 MIN -55 -80 -5 TYP. MAX UNIT V V V IC=-500μA ; IE=0 IE=-500μA ; IC=0 IC=-1A ;IB=-0.1A B -0.15 -0.5 -50 V μA VCB=-50V; IE=0 IC=-0.5A ; VCE=-5V 40 240 hFE Classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE KSA1614 Fig.2 Outline dimensions 3