KSC5030F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5030F DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 20 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 3 A PC 60 W ℃ TJ 150 Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEX(SUS) V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 3A ; IB2= 0.6A; L= 2mH,Clamped IC= 1mA; IE= 0 IC= 5mA; RBE= ∞ IE= 1mA; IC= 0 IC= 3A; IB= 0.6A B KSC5030F MIN 800 1100 800 7 TYP. MAX UNIT V V V V 2.0 1.5 10 10 10 8 120 15 40 V V μA μA IC= 3A; IB= 0.6A B VCB= 800V; IE= 0 VEB= 5V; IC=0 IC= 0.4A; VCE= 5V IC= 2A; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz IC= 0.4A ; VCE= 10V pF MHz Switching Times; Resistive Load ton ts tf Turn-On Time Storage Time Fall Time IC= 4A; IB1= 0.8A; IB2= -1.6A; VCC= 400V; RL= 100Ω 0.5 3.0 0.3 μs μs μs hFE-1 Classifications N 10-20 R 15-30 O 20-40 isc Website：www.iscsemi.cn 2