KSC5088

KSC5088

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    KSC5088 - isc Silicon NPN Power Transistor - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
KSC5088 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5088 DESCRIPTION ·High Collector-Base Voltage: VCBO = 1500V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 800 6 8 15 4 50 150 -55~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.49 UNIT ℃/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN KSC5088 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC=0 1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 8 hFE-2 DC Current Gain IC= 6A; VCE= 5V 5 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V 3 MHz Switching Times ts Storage Time IC= 6A; IB1= 1.2A; IB2= -2.4A; VCC= 200V 3.0 μs tf Fall Time 0.2 μs isc Website:www.iscsemi.cn 2
KSC5088
### 物料型号 型号:KSC5088

### 器件简介 - KSC5088是一个NPN硅功率晶体管。 - 具有高集电极-基极电压(VCBO=1500V)和高开关速度。

### 引脚分配 - PIN 1: BASE(基极) - PIN 2: COLLECTOR(集电极) - PIN 3: EMITTER(发射极)

### 参数特性 - 绝对最大额定值: - VCBO(集电极-基极电压):1500V - VCEO(集电极-发射极电压):800V - VEBO(发射极-基极电压):6V - IC(集电极电流-连续):8A - ICM(集电极电流-峰值):15A - IB(基极电流-连续):4A - PC(集电极功耗@TC=25℃):50W - TJ(结温):150℃ - Tstg(存储温度范围):-55~150℃

- 热特性: - Rth j-c(结到外壳的热阻):2.49℃/W

- 电气特性(T_C=25℃): - VcE(sat)(集电极-发射极饱和电压):Ic= 6A;IB= 1.5A时,最大5.0V - VBE(sat)(基极-发射极饱和电压):Ic= 6A;IB= 1.5A时,最大1.5V - IcBO(集电极截止电流):VcB= 800V;IE= 0时,最大10μA - IEBO(发射极截止电流):最大1mA - hFE-1(直流电流增益):Ic=1A;VcE= 5V时,最小8 - hFE-2(直流电流增益):Ic= 6A;VcE= 5V时,最小5 - fT(电流增益-带宽积):Ic= 1A;VcE= 10V时,典型值3MHz

- 开关时间: - ts(存储时间):Ic= 6A; IB1= 1.2A; IB2= -2.4A时,3.0μs - tf(下降时间):Vcc= 200V时,0.2μs

### 功能详解 KSC5088设计用于高清彩色显示器水平偏转输出应用。

### 应用信息 - 该晶体管适用于高清彩色显示器的水平偏转输出应用。

### 封装信息 - 封装类型:TO-3PML
KSC5088 价格&库存

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