KSC5321

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5321 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR) CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 800 500 7 5 10 2 4 100 150 -55~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 1mA; IE= 0 IC= 5mA; IB= 0 B KSC5321 MIN 800 500 7 TYP. MAX UNIT V V V IE= 1mA; IC= 0 IC= 3A; IB= 0.6A B 1.0 1.5 10 10 15 8 65 14 40 V V μA μA IC= 3A; IB= 0.6A B VCB= 800V; IE= 0 VEB= 7V; IC=0 IC= 0.6A; VCE= 5V IC= 3A; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz IC= 0.6A ;VCE= 10V; ftest= 1MHz pF MHz Switching Times ton ts tf ton ts tf Turn-On Time Storage Time Fall Time Turn-On Time Storage Time Fall Time IC= 4A; IB1= 0.8A; IB2= -1.6A; VCC= 250V IC= 1A; IB1= -IB2=0.2A; VCC= 125V 0.5 6.5 0.3 0.5 3.0 0.3 μs μs μs μs μs μs isc Website：www.iscsemi.cn 2