KSC5338

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5338 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR) CEO= 450V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 1000 450 9 5 10 2 4 100 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 1mA; IE= 0 IC= 5mA; IB= 0 B KSC5338 MIN 1000 450 9 TYP. MAX UNIT V V V IE= 1mA; IC= 0 IC= 1A; IB= 0.1A B 0.8 0.5 1.1 1.25 10 10 15 6 70 14 30 V V V V μA μA IC= 2A; IB= 0.4A B IC= 1A; IB= 0.1A B IC= 2A; IB= 0.4A B VCB= 800V; VBE= 0 VEB= 9V; IC=0 IC= 0.5A; VCE= 5V IC= 2A; VCE= 1V IE= 0; VCB= 10V; ftest= 0.1MHz IC= 0.1A ;VCE= 6V pF MHz Switching Times ton ts tf Turn-On Time Storage Time Fall Time IC= 1A; IB1= -IB2=0.2A; VCC= 125V 0.2 2.0 0.5 μs μs μs isc Website：www.iscsemi.cn 2