KSC5367

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5367 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 1600 800 12 3 6 2 4 80 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat) ICBO IEBO hFE-1 hFE-2 COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance CONDITIONS IC= 1mA; IE= 0 IC= 5mA; IB= 0 B KSC5367 MIN 1600 800 12 TYP. MAX UNIT V V V IE= 1mA; IC= 0 IC= 0.25A; IB= 25mA IC= 0.5A; IB= 50mA IC= 1A; IB= 0.2A B 2.5 4.5 2.5 1.5 20 20 12 8 40 35 V V V V μA μA IC= 3A; IB= 0.6A B VCB= 1600V; IE= 0 VEB= 12V; IC=0 IC= 0.4A; VCE= 3V IC= 5mA; VCE= 10V IE= 0; VCB= 10V; ftest= 1MHz pF Switching Times ton ts tf ton ts tf Turn-On Time Storage Time Fall Time Turn-On Time Storage Time Fall Time IC= 1A; IB1= 0.2A; IB2= -0.4A;VCC= 250V IC= 0.5A; IB1= 42mA; IB2= -333mA;VCC= 125V 0.5 2.2 0.5 0.5 4.0 0.5 μs μs μs μs μs μs isc Website：www.iscsemi.cn 2